TM 11-6625-539-14-4
TEST DATA
INTRODUCTION
Section I.
ing shows that 97.5 percent of these devices will
D-1. General
be greater than the absolute minimum. There is
a. This appendix provides test data for the
still a third class of devices that do not specify
transistors and other semiconductor devices
beta at all, such as unijunction devices, avalanche
which can be tested by Test Set, Transistor TS-
transistors, and double base diodes. These devices,
1836D/U. By comparing test results achieved dur-
along with negative resistance devices, are listed
ing semiconductor tests with those contained in
for reference only and are denoted by the letter C
this appendix, the condition of the device under
in the BETA column.
test can be ascertained.
b. A number of devices registered with JEDEC
b. The data presented in this appendix was
have been discontinued. These devices may still
gathered from manufacturers and specification
be in use in earlier designed equipment, and they
sheets. The characteristics measured are as fol-
therefore are included in this appendix.
lows:
c. The TS-1836D/U measures small signal beta
(1) Bi-polar transistor.
at a collector current of 1 mA. Beta values in this
(a) Beta is given as a minimum value unless
appendix represent manufacturer and military
otherwise specified.
specifications adjusted to this 1-mA bias condi-
(b) Leakage (ICO, ICES) is given as a maximum
tion. This test condition was chosen to yield maxi-
value and is in microampere unless otherwise
mum information on the greatest number of tran-
specified.
sistors possible without unduly complicating the
(2) Field effect transistors. Transconductance
operation of the test set.
( GM ) is given as a minimum value and is in
d. The TS-1836D/U measures ICO) and ICES as the
micromhos.
leakage parameter. ICO, measured out of circuit, is
(3) Diodes and rectifiers. Reverse leakage
measured at 6 volts; I CES is measured in circuit, at
( IR) in or out of circuit is given as a maximum
a lower voltage; and both ICES and Ico m a x i m u m
value and is in microampere unless otherwise
values are given in the same column. Manufactur-
specified.
ers specify Ico at various potentials; however, a
plot of collector current vs collector voltage of a
D-2. Bi-Polar Transistor Data
reversed biased collector-to-base junction with a
negligible amount of leakage current yields a
a. Section II presents data on bi-polar transis-
graph which rises to some current rather quickly
tors. Two of the most important parameters for
and then remains constant with increasing volt-
testing transistors either in or out of circuit are
age until the breakdown voltage of the junction is
leakage and beta. Minimum values of beta and
reached. A leakage component across the junction
maximum values of leakage are presented as an
modifies this curve in an amount depending, of
aid in determining faulty transistors and transis-
course, on the amount of leakage present across
tors that have started to degrade. In some in-
the junction. Six volts was chosen as a figure that
stances, however, transistors are designed for a
would give maximum information on the largest
specific application and some manufacturers deem
quantity of transistors and diodes.
it more advisable to specify a maximum value of
e. Since the leakage component modifies the ICO
beta. These devices have the letter (A) after their
curve by the amount of leakage across the junc-
numerical value. Some manufacturers also prefer
tion, it is possible to have a collector-to-base junc-
to specify a typical minimum value. These devices
tion that is shorted or one that may have an
have the letter (B) after their numerical value.
extremely high resistive component appear to
The bell curve used in semiconductor manufactur-
